Toshiba Unveils 130nm FFSA™ Development Platform Featuring High Performance, Low Power and Low Cost Structured Array

- Long-term supply using a subsidiary’s fab -

TOKYO — (BUSINESS WIRE) — November 12, 2018Toshiba Electronic Devices & Storage Corporation (“Toshiba”) today announced a new 130nm manufacturing process node based FFSA™ (Fit Fast Structured Array), an innovative custom SoC development platform featuring high performance, low cost and low power consumption[1].

This press release features multimedia. View the full release here: https://www.businesswire.com/news/home/20181112005853/en/

Toshiba: 130nm FFSA(TM) development platform featuring high performance, low power and low cost stru ...

Toshiba: 130nm FFSA(TM) development platform featuring high performance, low power and low cost structured array.(Artist's impression)(Graphic: Business Wire)

Toshiba provides ASIC (Application Specific IC) and FFSA™ platforms that suit the customer's business environment and requirements, that also deliver efficient solutions for custom SoC development. FFSA™ devices use a silicon-based master slice which is common in combination with upper metal layers that are reserved for customization. By customizing only a few masks, FFSA™ offers much lower NRE costs than individual ASIC development. It also enables significant reductions in development cost and provides samples and mass-production in a short period of time than for conventional ASIC’s. Additionally, FFSA™ enables higher performance and lower power consumption than FPGA (Field Programmable Gate Array) using ASIC design methodology and its library. [1]

The 130nm process series joins Toshiba’s current 28nm, 40nm, and 65nm process portfolio making FFSA™ a suitable option for the growing industrial equipment market.

The 130nm FFSA devices designed on the platform will be manufactured by Japan Semiconductor, a subsidiary of Toshiba Electronic Devices & Storage Corporation with a long and proven history of expertise in manufacturing ASIC, ASSP and microcomputers. This will ensure long-term supply and meet the needs of customer business continuity plans.

The new series deliver the performance and integration needed for industrial apparatus, communication facilities, OA equipment and consumer products where steady market expansion is expected.

FFSA lineup

Process technology   130nm   65nm   40nm   28nm
The maximum gate number[2]

912Kgate

21Mgate 25Mgate 100Mgate
Maximum SRAM capacity 664Kbit 19Mbit 30Mbit 207Mbit
Maximum transceiver speed - - 12.5Gbps 28Gbps
Number of maximum transceiver lanes - - 14 64
Number of maximum I/O pins   337   1110   720   928
 

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