MagnaChip Unveils New 0.18 Micron RFSOI 2.5V Process With Enhanced Switching Performance

SEOUL, South Korea and SAN JOSE, Calif., March 13, 2017 — (PRNewswire) —  MagnaChip Semiconductor Corporation ("MagnaChip") (NYSE: MX), a Korea-based designer and manufacturer of analog and mixed-signal semiconductor products, announced today that it now offers a new 0.18 micron RFSOI process with enhanced switching performance. Compared to the previous 1.5/2.5V process, this new switch-centric process created specifically for 2.5V reduces manufacturing cost and time-to-market while providing competitive and superior performance for antenna switches used in mobile and Internet-of-Things devices for wireless connectivity.

There are several benefits to using the new 0.18 micron 2.5V RFSOI process. The primary benefit is that it is a cost effective process. It offers a 150fs of Ron*Coff using aluminum for metal1 and reduces the number of photo steps by approximately 15% as compared to the industry standard by one poly silicon layer and four metal layers (1P4M). By reducing the number of mask layers, customers will reduce costs and improve their time-to-market with a shorter turnaround time in the fab. Ron*Coff is a figure of merit used to rate the performance of an RF switch.

Another important benefit is that it has robust breakdown at above 4V while also maintaining Ron*Coff at 150fs. Through high BV (Breakdown Voltage), the stack number of switch is reduced, resulting in chip size reduction.

Furthermore, the new 0.18 micron RFSOI process reduces insertion loss by 20% at 2GHz and low harmonics of better than -60dBm at 35dBm power level. This process, which has successfully been demonstrated with an SP8T (Single Pole Eight Throw) switch, builds on a trap-rich, high-resistivity substrate to suppress harmonic distortion. It also provides additional transistors with useful options such as floating body, low leakage, and enables a reduction in area of approximately 18%, from our previous process, for the integration of multiple RF and analog functions onto a smaller die. Available process options also include a 27-volt metal-inductor-metal capacitor, geometry scalable inductor, high resistivity poly resistor, MOS varactor, and up to 4 layers of metal with 4-micron thick top metal for rich power handling.

"The addition of the switch-centric 2.5V process to our RFSOI technology portfolio is another example of MagnaChip's strong commitment to our foundry customers, who continually desire cost-competitive and high-performing RFSOI processes," said YJ Kim, Chief Executive Officer of MagnaChip. Mr. Kim also added that "We will continue to offer differentiated processes and expand our RFSOI process offerings to meet the growing and highly specific technology requirements of our global customer-base."

About MagnaChip Semiconductor 
MagnaChip is a Korea-based designer and manufacturer of analog and mixed-signal semiconductor products for high-volume consumer, communication, industrial and computing applications. The Company's Standard Products Group and Foundry Services Group provide a broad range of standard products and manufacturing services to customers worldwide. MagnaChip, with a 30-year operating history, owns a portfolio of more than 3,400 registered and pending patents, and has extensive engineering, design and manufacturing process expertise. For more information, please visit www.magnachip.com. Information on or accessible through, MagnaChip's website is not a part of, and is not incorporated into, this release.

 

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To view the original version on PR Newswire, visit: http://www.prnewswire.com/news-releases/magnachip-unveils-new-018-micron-rfsoi-25v-process-with-enhanced-switching-performance-300420382.html

SOURCE MagnaChip Semiconductor Corporation

Contact:
MagnaChip Semiconductor Corporation
Web: http://www.magnachip.com




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